Platinum Metals Rev., 1984, 28, (2), 52
A requirement for electronic devices capable of operating at elevated temperatures for extended times has identified a need for a thermally robust metal-semiconductor contact which is not subject to the diffusion that would otherwise degrade its electrical characteristics. Even at relatively low temperatures grain boundaries act as effective diffusion channels for the conventionally used metals, so amorphous metal films have been used to provide a barrier between the primary metallisation and the semiconductor.
Now a letter from the GEC Research Laboratories (M. J. Kelly, A. G. Todd, M. J. Sisson and D. K. Wickenden, Electron. Lett., 1983, 19, (13), 474–475) describes the relative enhancement of the thermal stability of Schottky barriers on both silicon and gallium arsenide that can be achieved by the use of suitable amorphous thin films, and reports that tantalum-iridium has proved to be superior in all respects to any other material used to date.