Platinum Metals Rev., 1999, 43, (4), 157
MOCVD of Platinum Metals Films
The deposition of thin metallic and oxide films of platinum group metals via metal-organic chemical vapour deposition (MOCVD) is used for electronics, catalytic materials and advanced coatings. However, the films can be contaminated with impurities if precursors such as Pt(PF3)4 and (C3H7O2PtMe3)2 are used and the MOCVD process has not removed them.
Now, scientists have synthesised a new precursor: methylcyclopentadienyl-(η3-allyl)platinum for platinum deposition (G. Rossetto, P. Zanella, G. Carta, R. Bertani, D. Favretto and G. M. Ingo, Appl. Organomet. Chem ., 1999, 13, (7), 509-513). High quality and purity Pt films were deposited, probably due to the methyl-substituted cyclopentadienyl ligands being good leaving groups.
MOCVD has also been used to grow epitaxially conductive ruthenium dioxide thin films on LaAlO3(100) and MgO(100) crystal substrates (P. Lu, S. He, F. X. Li and Q. X. Jia, Thin Solid Films, 1999, 340, (1, 2), 140-144). Bis(cyclopentadienyl)Ru was the precursor and oxygen the reactant gas. The deposited films were crackfree, adhered well to the substrates and had room temperature resistivity of 40-50 μΩ cm.